Preparation of PZT films derived by hybrid processing for MEMS application

Lijun Yan; Zhan Jie M. Wang; Hiroyuki Kokawa; Ryutaro Maeda

doi:10.1117/12.522807

2 April 2004 Preparation of PZT films derived by hybrid processing for MEMS application

Lijun Yan, Zhan Jie M. Wang, Hiroyuki Kokawa, Ryutaro Maeda

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.522807
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

Pb(Zr_0.52Ti_0.48)O₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO₂/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no shape interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization P_r = 23.6 μC/cm², and coercive field E_c = 54.8 kV/cm.

Citation Download Citation

Lijun Yan, Zhan Jie M. Wang, Hiroyuki Kokawa, and Ryutaro Maeda "Preparation of PZT films derived by hybrid processing for MEMS application", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.522807

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