Nonlinear free carrier absorption in semiconductor heterostructures in the terahertz regime

Chao Zhang; Saeid Hessami Pilehrood

doi:10.1117/12.521175

25 March 2004 Nonlinear free carrier absorption in semiconductor heterostructures in the terahertz regime

Chao Zhang, Saeid Hessami Pilehrood

Proceedings Volume 5277, Photonics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.521175
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

Absorption of electromagnetic waves in electronic systems coupled to intense terahertz waves is calculated. We formulate a theoretical framework suitable for calculating the frequency-dependent electrical current under an intense THz radiation. This first principle method is based on the time-evolution of electron density matrix and it includes electron-photon coupling to all orders. We first obtained the time-dependent electronic states as a function of terahertz field and frequency. The electron-impurity scattering is included to the second order. The absorption of electromagnetic waves of a probing field via various electron-terahertz-photon coupling is then obtained in terms of frequency-dependent dielectric functions.

Citation Download Citation

Chao Zhang and Saeid Hessami Pilehrood "Nonlinear free carrier absorption in semiconductor heterostructures in the terahertz regime", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); https://doi.org/10.1117/12.521175

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