Developments in Si and SiO2 etching for MEMS-based optical applications

Lee Adrian Donohue; Janet Hopkins; Richard Barnett; Andrew Newton; Anthony Barker

doi:10.1117/12.524471

29 December 2003 Developments in Si and SiO₂ etching for MEMS-based optical applications

Lee Adrian Donohue, Janet Hopkins, Richard Barnett, Andrew Newton, Anthony Barker

Proceedings Volume 5347, Micromachining Technology for Micro-Optics and Nano-Optics II; (2003) https://doi.org/10.1117/12.524471
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States

Abstract

Over the last decade the design and reactive ion etch based fabrication of a range of innovative Si and SiO₂ MEMS based optical transmission devices has significantly increased. These devices rely on the principle that the data contained within the transmitted light retains its integrity, hence it is important that the reflected light does not suffer interference and losses from the surface used to direct it. To achieve this, reflecting surfaces need to be as smooth as possible, without compromising processing etch rate, sidewall profile and cross-wafer uniformity. This paper describes the results of recent hardware and process development trials using time multiplexed silicon ICP etch processing (STS ASE) at reduced switching times to provide vertical sidewalls at less than 10nm RMS roughness. For dielectric etch optical applications requiring high aspect ratio (>10:1) or through wafer depth capability (400mm at 1.2μm/min), we also report the results of process development trials using STS Advanced Oxide Etch (AOE) technology.

Citation Download Citation

Lee Adrian Donohue, Janet Hopkins, Richard Barnett, Andrew Newton, and Anthony Barker "Developments in Si and SiO₂ etching for MEMS-based optical applications", Proc. SPIE 5347, Micromachining Technology for Micro-Optics and Nano-Optics II, (29 December 2003); https://doi.org/10.1117/12.524471

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