Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN

W. Liang; Kong-Thon Tsen; David K. Ferry; K. H. Kim; Jing Yu Lin; Hongxing Jiang

doi:10.1117/12.528322

16 June 2004 Subpicosecond Raman studies of nonequilibrium electron transport in an In_0.4Ga_0.6N epilayer grown on GaN

W. Liang, Kong-Thon Tsen, David K. Ferry, K. H. Kim, Jing Yu Lin, Hongxing Jiang

Proceedings Volume 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII; (2004) https://doi.org/10.1117/12.528322
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Field-induced electron transport in an In_xGa_1-xN (x≅0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In_xGa_1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Citation Download Citation

W. Liang, Kong-Thon Tsen, David K. Ferry, K. H. Kim, Jing Yu Lin, and Hongxing Jiang "Subpicosecond Raman studies of nonequilibrium electron transport in an In_0.4Ga_0.6N epilayer grown on GaN", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.528322

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