Analysis of nitride-based quantum well LEDs and novel white LED design

Dong Xiao; Ki Wook Kim; Salah M. Bedair; John M. Zavada

doi:10.1117/12.524424

21 June 2004 Analysis of nitride-based quantum well LEDs and novel white LED design

Dong Xiao, Ki Wook Kim, Salah M. Bedair, John M. Zavada

Proceedings Volume 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII; (2004) https://doi.org/10.1117/12.524424
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Fundamental electrical and optical properties of strained wurtzite InGaN/GaN-based quantum well light emitting diodes are calculated based on the Rashba-Sheka-Pikus Hamiltonian in the vicinity of the Gamma point. The theoretical results show an excellent correlation with experiments. A novel design of using AlInGaN as quantum barrier is proposed to realize efficient red emission, which is hard to achieve if GaN is used as barrier. To achieve high efficiency, the important factors relating to the oscillator strength are discussed in detail.

Citation Download Citation

Dong Xiao, Ki Wook Kim, Salah M. Bedair, and John M. Zavada "Analysis of nitride-based quantum well LEDs and novel white LED design", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); https://doi.org/10.1117/12.524424

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