Si-based resonant cavity light-emitting devices

Maria Eloisa Castagna; Salvatore Coffa; Anna Muscara; Alessandro Costa; Sebastiano Ravesi; Simona Lorenti; Marco Camalleri

doi:10.1117/12.529135

21 June 2004 Si-based resonant cavity light-emitting devices

Maria Eloisa Castagna, Salvatore Coffa, Anna Muscara, Alessandro Costa, Sebastiano Ravesi, Simona Lorenti, Marco Camalleri

Author Affiliations +

Proceedings Volume 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII; (2004) https://doi.org/10.1117/12.529135
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We report on the fabrication and characterization of Si/SiO₂ Fabry-Perot microcavities. These structures are used to enhance the external quantum emission along the cavity axis and the spectral purity of emission from Rare earth doped and undoped SiOx (x <= 2)films that are used as active media to fabricate a Si based RCLED (Resonant Cavity Light emitting Devices). These structures are fabricated by chemical vapour deposition on a silicon substrate. The microcavities are tuned at different wavelengths: 540nm, 980nm, 1540nm, 780nm and 850nm (characteristic emission wavelength respectively for Tb, Yb and Er and Silicon Rich Oxide (SRO)). The reflectivity of the microcavities is of 97% and the factor quality ranges from 50 (for the cavity tuned at 540nm) to 95 (for the cavities tuned at 980nm and 1540nm) and 150 (for the cavity tuned at 780nm and 850 nm). These cavities have been characterized by TEM analysis to evaluate films uniformity, thickness and densification after annealing process for temperature ranging from 800° to 1100°C. The reflectivity and photoluminescence spectra show resonant wavelengths in agreement with the calculated values. A new structure to electrically pump the active media has been designed. The electrical properties of the active media have been analysed. An enhancement of the photoluminescence signal of twenty times have been achieved for the selected emission wavelength.

Citation Download Citation

Maria Eloisa Castagna, Salvatore Coffa, Anna Muscara, Alessandro Costa, Sebastiano Ravesi, Simona Lorenti, and Marco Camalleri "Si-based resonant cavity light-emitting devices", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); https://doi.org/10.1117/12.529135

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KEYWORDS

Silicon

Optical microcavities

Reflectivity

Semiconducting wafers

Mirrors

Transmission electron microscopy

Light emitting diodes

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