F+, B+ ion implantation into GaAs multilayer heterostructures

M. Tigishvili; N. Gapishvili; Revaz G. Melkadze; M. Ksaverieva; T. Khelashvili

doi:10.1117/12.557447

28 May 2004 F⁺, B⁺ ion implantation into GaAs multilayer heterostructures

M. Tigishvili, N. Gapishvili, Revaz G. Melkadze, M. Ksaverieva, T. Khelashvili

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557447
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

To develop reliable intercomponent insulation methods to fabricate devices and IC's based on GaAs multiplayer heterostructures the formation of high-resistivity regions in these structures by selective F⁺ and B⁺ ion implantation is studied. The implantation and the consequent annealing regimes are established.

Citation Download Citation

M. Tigishvili, N. Gapishvili, Revaz G. Melkadze, M. Ksaverieva, and T. Khelashvili "F⁺, B⁺ ion implantation into GaAs multilayer heterostructures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557447

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