Global CD uniformity improvement using dose modulation and pattern correction of pattern density-dependent and position-dependent errors

Chia-Jen Chen; Hsin-Chang Lee; Lee-Chih Yeh; Kai-Chung Liu; Ta-Cheng Lien; Yi-Chun Chuo; Hung-Chang Hsieh; Burn J. Lin

doi:10.1117/12.557676

20 August 2004 Global CD uniformity improvement using dose modulation and pattern correction of pattern density-dependent and position-dependent errors

Chia-Jen Chen, Hsin-Chang Lee, Lee-Chih Yeh, Kai-Chung Liu, Ta-Cheng Lien, Yi-Chun Chuo, Hung-Chang Hsieh, Burn J. Lin

Author Affiliations +

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557676
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

The specification of mask global CD uniformity (GCDU) is ever tightening. There is no exception at the 65-nm node. Some of the key contributors affecting GCD non-uniformity is pattern-density effects such as fogging effect from the e-beam writer and macro loading effect from the etcher. In addition, the contributions from position-dependent effects are significant, and these contributions included resist developing, baking, as well as aberrations of the wafer-imaging lens. It is challenging to quantify these effects and even more so to correct them to improve the GCDU. Correction of the fogging and etch loading effects had been reported by various authors. In addition to correction for these effects, we are reporting the position-dependent effects in this paper. Currently, the fogging effect induces 5 nm of CD error and an additional 5~15 nm of CD errors is induced by the etch-loading effect within a 60-mm radius area. We improved the GCDU by pattern-dependent corrections. Using position-dependent dose correction in mask writing, we managed to effectively compensate for intra-field non-uniformity on wafer, which is induced by lens aberrations and illumination non-uniformity.

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Chia-Jen Chen, Hsin-Chang Lee, Lee-Chih Yeh, Kai-Chung Liu, Ta-Cheng Lien, Yi-Chun Chuo, Hung-Chang Hsieh, and Burn J. Lin "Global CD uniformity improvement using dose modulation and pattern correction of pattern density-dependent and position-dependent errors", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557676

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