Paper
20 August 2004 Investigations on microloading effect: a parallel approach to PGSD (proximity gap suction development)
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Abstract
The move towards smaller feature size continuously requires more accurate lithography models. Part of models improvement comes from a better understanding of involved physics and chemistry. State of the art models assume development rate to be dependent on level of de-protection of resist film while development kinetics is not taken into account. Model refinements consist in getting a good model of development rate versus de-protection level. Recent studies have put in evidence the importance and the influence of development kinetics. Based on this, a new development process concept has been developed: the Proximity Gap Suction Development (PGSD). This paper presents a parallel approach to PGSD using megasonic agitation in order to improve development process understanding. Analysis has been performed by focusing on microloading effect characterization, also taking into account Critical Dimension (CD) linearity, CD iso-dense bias. Interpretation and analysis were achieved through use of DOE techniques. Results are then discussed with respect to previous PGSD studies but also to current development models. It is believed that improvement of development process could be also achieved in wafer making through the use of high flow rate development techniques such as PGSD or megasonic development.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Courboin, Jong Woo Choi, S. H. Jung, Seung Hee Baek, Lee-Ju Kim, Chang Nam Ahn, and Hong-Seok Kim "Investigations on microloading effect: a parallel approach to PGSD (proximity gap suction development)", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557708
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Cited by 3 scholarly publications.
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KEYWORDS
Critical dimension metrology

Standards development

Photomasks

Lithography

Semiconducting wafers

Diffractive optical elements

Photoresist processing

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