Paper
20 August 2004 OPC development: variable CD-SEM bias through feature shape, feature density, and material composition
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Abstract
Development of OPC strategies, both model-based and rules-based, can be greatly accelerated by identifying and minimizing metrology bias during OPC iterations. The CD-SEM edge-detection algorithms best suited for precision on 90 nm and 65 nm node ground-rule structures often do not provide linear response across a wide range of line sizes, line-end gaps and other structures of interest during OPC refinement. To ensure that reliable metrology data is being fed into the OPC calculation engine, reference measurements that are independent of (a) feature size, (b) feature shape and (c) material composition must be made to optimize CD-SEM edge-detection for this application. We show the importance of on-line atomic force microscopy (AFM) measurements to improve CD-SEM measurements and speed turnaround of OPC model generation. Measurements are made on through-pitch and through-size lines and spaces, both after litho and after etch and compared with CD-SEM measurements.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kirk Miller, Katsuhiro Matsuyama, Ingo Schmitz, and Dean J. Dawson "OPC development: variable CD-SEM bias through feature shape, feature density, and material composition", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557810
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KEYWORDS
Optical proximity correction

Etching

3D metrology

Metrology

Atomic force microscopy

Photomasks

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