Study of laser die release by Q-switched Nd:YAG laser pulses

Natallia S. Karlitskaya; Dirk Frits de Lange; Rene Sanders; Johan Meijer

doi:10.1117/12.546674

20 September 2004 Study of laser die release by Q-switched Nd:YAG laser pulses

Natallia S. Karlitskaya, Dirk Frits de Lange, Rene Sanders, Johan Meijer

Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.546674
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States

Abstract

A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.

Citation Download Citation

Natallia S. Karlitskaya, Dirk Frits de Lange, Rene Sanders, and Johan Meijer "Study of laser die release by Q-switched Nd:YAG laser pulses", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); https://doi.org/10.1117/12.546674

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