Flicker and generation-recombination noise in Hg1-xCdxTe photoconductors based on MBE-grown multilayer structures

Galina V. Chekanova; Albina A. Drugova; Alexander V. Kurbatov; Mikhail S. Nikitin

doi:10.1117/12.547209

25 May 2004 Flicker and generation-recombination noise in Hg_1-xCd_xTe photoconductors based on MBE-grown multilayer structures

Galina V. Chekanova, Albina A. Drugova, Alexander V. Kurbatov, Mikhail S. Nikitin

Author Affiliations +

Proceedings Volume 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II; (2004) https://doi.org/10.1117/12.547209
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

Spectral density of "generation-recombination" noise voltage <δV²_gr> ("g-r noise") in Photoconductive Mercury-Cadmium Telluride / Hg_1-xCd_xTe (PC MCT) infrared radiation detectors with absorber n-Hg_1-xCd_xTe layer was calculated. Variations of <δV²_gr> with doping level (n ≈ Nd), ambient background flux density (Q_bgr, T_bgr ≈ 300 K), electrical bias (V_b/I_b) and design of sensitive pixel were analyzed. Spectral density of low-frequency noise as superposition of Flicker-noise "1/f", g-r noise resulting from fluctuations in generation-recombination rates of equilibrium (thermal) charge carriers <δV²_{gr, th}> and excess charge carriers exited by background photons <δV²_gr,bgr> and Johnson-Nyquist noise <δV²_JN> were examined in Hg_1-xCd_xTe photoconductors based on MBE-grown multi-layer structures. Noise measurements were performed on Long-Wave (LWIR) PC MCT detectors with responsivity peak wavelength 10 ≤ λ_p ≤ 12 μm at operating temperature Top ≈ 290-300 K and 78 K. Registration and recording of noise voltage spectral density graphs were performed in frequency range from 6 Hz to 12.5 kHz with resolution equals to 6 Hz. Tested PC MCT detectors show extremely low spectral density of excess Flicker-noise with cut-off frequency (F_co) ranging from 10 to 300 Hz. Measured dependencies of g-r noise voltage spectral density are correlated with calculations.

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Galina V. Chekanova, Albina A. Drugova, Alexander V. Kurbatov, and Mikhail S. Nikitin "Flicker and generation-recombination noise in Hg_1-xCd_xTe photoconductors based on MBE-grown multilayer structures", Proc. SPIE 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II, (25 May 2004); https://doi.org/10.1117/12.547209

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KEYWORDS

Photoresistors

Cadmium

Tellurium

Mercury

Long wavelength infrared

Sensors

Lanthanum

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