Performance of a GaAs JFET at cryogenic temperature for faint light detection system

Mikio Fujiwara; Masahide Sasaki; Makoto Akiba

doi:10.1117/12.550035

29 September 2004 Performance of a GaAs JFET at cryogenic temperature for faint light detection system

Mikio Fujiwara, Masahide Sasaki, Makoto Akiba

Author Affiliations +

Proceedings Volume 5499, Optical and Infrared Detectors for Astronomy; (2004) https://doi.org/10.1117/12.550035
Event: SPIE Astronomical Telescopes + Instrumentation, 2004, Glasgow, United Kingdom

Abstract

A GaAs junction field-effect transistor (JFET) is a promising candidate for low noise at low frequency, and low-power cryogenic electronics to read out high-impedance photo-detectors. We report on the spectral noise characteristics, gate leak current, and gate capacitance of a SONY n-type GaAs JFET at a cryogenic temperature of 4.2 K. In our papers reporting performances of FETs, the noise and leak current have been measured separately. However, noise should be measured in the case of the gate terminal surrounded by high impedance devices, so-called in high impedance circumstance. In such high impedance circumstance, the dielectric polarization noise occurs, which is generated in devices and material around the gate terminal. Materials with dielectric loss generate dielectric polarization noise, which cannot be measured in low impedance circumstance because the electric charges compensate the dipoles. Therefore, to estimate the performance of the FETs for cryogenic readout electronics, noise measurement should be done in high impedance circumstance. In our previous work on a GaAs FET, low noise at low-frequency, i.e. ~500 nV/Hz^1/2 at 1 Hz was achieved by the thermal cure (TC) in low-impedance circumstance. By using the thermal curing technique, we have obtained a low noise level of ~500 nV/Hz^1/2 at 1Hz. Moreover, we have demonstrated faint light detection at 4.2 K using an InGaAs pin photodiode and a charge integration amplifier composed of the GaAs JFET. We have succeeded in detecting such ultra low power influx as a few photons per second with a quantum efficiency of ~80% and tolerance of 0.5 photons. The leak current of this detection system is ~500 electrons/hour.

Citation Download Citation

Mikio Fujiwara, Masahide Sasaki, and Makoto Akiba "Performance of a GaAs JFET at cryogenic temperature for faint light detection system", Proc. SPIE 5499, Optical and Infrared Detectors for Astronomy, (29 September 2004); https://doi.org/10.1117/12.550035

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Field effect transistors

Gallium arsenide

Cryogenics

Capacitance

Photons

PIN photodiodes

Dielectric polarization

Show All Keywords

Keywords/Phrases

Search In:

Publication Years