Study of the oxidization of ns-SiNx:H thin films using FTIR phase modulated ellipsometry

Jordi Sancho-Parramon; Salvador Bosch; Albert Pinyol; Enric Bertran; Adolf Canillas

doi:10.1117/12.557424

29 September 2004 Study of the oxidization of ns-SiNx:H thin films using FTIR phase modulated ellipsometry

Jordi Sancho-Parramon, Salvador Bosch, Albert Pinyol, Enric Bertran, Adolf Canillas

Proceedings Volume 5527, Advances in Thin Film Coatings for Optical Applications; (2004) https://doi.org/10.1117/12.557424
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

The time evolution of the optical properties of nanostructured silicon nitride (ns-SiN_x:H) thin films was studied by FTIR phase-modulated ellipsometry. The samples were produced by RF-PECVD and ellipsometric measurements were performed after the deposition and at different time intervals in the spectral range between 950 and 3500 cm^-1. The experimental data show an evolution from an initial not-oxidized state to a final oxidized state. The oxidation process of ns-SiN_x:H films is modeled with two different approaches: i) assuming that the oxidation starts at the film surface and diffuses towards the substrate and ii) assuming a homogeneous oxidization through the entire volume of the film. The final best fitting of the data suggests that the oxidization occurs homogeneously in all the thickness of the film.

Citation Download Citation

Jordi Sancho-Parramon, Salvador Bosch, Albert Pinyol, Enric Bertran, and Adolf Canillas "Study of the oxidization of ns-SiNx:H thin films using FTIR phase modulated ellipsometry", Proc. SPIE 5527, Advances in Thin Film Coatings for Optical Applications, (29 September 2004); https://doi.org/10.1117/12.557424

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