Uncooled InAs photodiodes for optoelectronic sensors

Grygoriy S. Oliynuk; Andriy V. Sukach; Vladimir V. Tetyorkin; Sergiy V. Stariy; Volodymyr I. Lukyanenko; Andriy T. Voroschenko

doi:10.1117/12.561401

22 October 2004 Uncooled InAs photodiodes for optoelectronic sensors

Grygoriy S. Oliynuk, Andriy V. Sukach, Vladimir V. Tetyorkin, Sergiy V. Stariy, Volodymyr I. Lukyanenko, Andriy T. Voroschenko

Author Affiliations +

Proceedings Volume 5564, Infrared Detector Materials and Devices; (2004) https://doi.org/10.1117/12.561401
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

InAs photodiodes were prepared by short-term cadmium diffusion into substrates with n-type conductivity. This preparation technique results in formation of p⁺-p-n-n⁺ diodes with compensated region embedded between two doped regions. Experimental data are explained by suppression of Auger recombination in active compensated region. Electrical and photoelectrical properties of photodiodes were investigated in the temperature range 77-295 K. It is shown that the total dark current is determined by the diffusion carrier transport mechanism. The diffused photodiodes exhibit higher photosensitivity in the short wavelength region due to presence of built-in electric field at the surface. Their threshold parameters are found to be approximately the same as in commercially available photodiodes.

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Grygoriy S. Oliynuk, Andriy V. Sukach, Vladimir V. Tetyorkin, Sergiy V. Stariy, Volodymyr I. Lukyanenko, and Andriy T. Voroschenko "Uncooled InAs photodiodes for optoelectronic sensors", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.561401

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