Terahertz emission from surface optical rectification in n-InAs

M. Reid; R. Fedosejevs

doi:10.1117/12.567332

20 December 2004 Terahertz emission from surface optical rectification in n-InAs

M. Reid, R. Fedosejevs

Author Affiliations +

Proceedings Volume 5577, Photonics North 2004: Optical Components and Devices; (2004) https://doi.org/10.1117/12.567332
Event: Photonics North, 2004, Ottawa, Ontario, Canada

Abstract

Terahertz emission from n-type (100), (110) and (111) InAs crystals have been measured as a function of the sample orientation. Emission was excited using 120 fs Ti:Sapphire laser pulses at an incident angle of 45° with fluences of approximately 1-2mJ/cm². The data is shown to match the behavior expected for optical rectification at the surface, with small contributions from bulk optical rectification and photo-carrier diffusion. Thus, at fluences employed in the present study, it appears that the dominant mechanism for generating THz radiation is optical rectification at the surface.

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M. Reid and R. Fedosejevs "Terahertz emission from surface optical rectification in n-InAs", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.567332

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