Damage thresholds of HfO2/SiO2 and ZrO2/SiO2 high reflectors at 1.064 microns deposited by reactive DC magnetron sputtering

David Reicher; Martha Navarro; Robin Sydenstricker; Jason Oberling; Micheal Marquez; Julio Villafuert; Albert A. Ogloza; Joni Pentony; Peter Langston; David O'Conner; Denton Marrs

doi:10.1117/12.583022

21 February 2005 Damage thresholds of HfO₂/SiO₂ and ZrO₂/SiO₂ high reflectors at 1.064 microns deposited by reactive DC magnetron sputtering

David Reicher, Martha Navarro, Robin Sydenstricker, Jason Oberling, Micheal Marquez, Julio Villafuert, Albert A. Ogloza, Joni Pentony, Peter Langston, David O'Conner, Denton Marrs

Author Affiliations +

Proceedings Volume 5647, Laser-Induced Damage in Optical Materials: 2004; (2005) https://doi.org/10.1117/12.583022
Event: Boulder Damage Symposium XXXVI, 2004, Boulder, Colorado, United States

Abstract

HfO₂/SiO₂ and ZrO₂/SiO₂ high reflectors at 1.064 microns were deposited by pulsed reactive DC magnetron sputtering. These dielectric thin film high reflectors were deposited with and without the use of an electron source. The electron source greatly decreased arcing of the magnetrons during the deposition process resulting in thin films with fewer defects. The high reflectors were laser damage tested at 1.064 microns. The optical properties of the thin film coatings were characterized prior to laser damage testing. Optical characterization techniques included angle resolved scatter (BRDF), total integrated scatter (TIS), and adiabatic calorimetry. The dependence of the laser damage threshold and optical properties on deposition conditions is reported.

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David Reicher, Martha Navarro, Robin Sydenstricker, Jason Oberling, Micheal Marquez, Julio Villafuert, Albert A. Ogloza, Joni Pentony, Peter Langston, David O'Conner, and Denton Marrs "Damage thresholds of HfO₂/SiO₂ and ZrO₂/SiO₂ high reflectors at 1.064 microns deposited by reactive DC magnetron sputtering", Proc. SPIE 5647, Laser-Induced Damage in Optical Materials: 2004, (21 February 2005); https://doi.org/10.1117/12.583022

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