Pulsed laser-induced electrical-current joule heating for crystallization of silicon thin films

Nobuyuki Andoh; Toshiyuki Sameshima

doi:10.1117/12.596359

8 October 2004 Pulsed laser-induced electrical-current joule heating for crystallization of silicon thin films

Nobuyuki Andoh, Toshiyuki Sameshima

Proceedings Volume 5662, Fifth International Symposium on Laser Precision Microfabrication; (2004) https://doi.org/10.1117/12.596359
Event: Fifth International Symposium on Laser Precision Microfabrication, 2004, Nara, Japan

Abstract

50 nm-amorphous silicon films were crystallized by the pulsed laser-induced electrical-current joule heating method. Holes with diameter of 6 μm were formed within silicon strips, in order to control the position of the formation of crystalline grains. Large crystalline grains of 10 μm were formed between the holes in lateral direction from the observation of the photograph of the optical microscopy. Two dimensional heat flow simulation suggested that a temperature gradient was the ~1 x 10⁵ K/cm.

Citation Download Citation

Nobuyuki Andoh and Toshiyuki Sameshima "Pulsed laser-induced electrical-current joule heating for crystallization of silicon thin films", Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); https://doi.org/10.1117/12.596359

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