Paper
25 March 2005 GaInAs/InP nanopillar arrays for long wavelength infrared detection
Aaron Gin, Yajun Wei, Andrew Hood, Darin Hoffman, Manijeh Razeghi, Gail J. Brown
Author Affiliations +
Abstract
Nanopillar devices have been fabricated from GaInAs/InP QWIP material grown by MOCVD. Using electron beam lithography and reactive ion etching techniques, large, regular arrays of nanopillars with controllable diameters ranging from 150 nm to less than 40 nm have been reproducibly formed. Photoluminescence experiments demonstrate a strong peak wavelength blue shift for nanopillar structures compared to the as-grown quantum well material. Top and bottom metal contacts have been realized using a polyimide planarization and etchback procedure. I-V and noise measurements have been performed. Optical measurements indicate photoconductive response in selected nanopillar arrays. Device peak wavelength response occurs at about 8 μm with peak device responsivity of 420 mA/W. Peak detectivity of 3×108 cmHz1/2/W has been achieved at -1V bias and 30 K.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aaron Gin, Yajun Wei, Andrew Hood, Darin Hoffman, Manijeh Razeghi, and Gail J. Brown "GaInAs/InP nanopillar arrays for long wavelength infrared detection", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.597073
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Cited by 1 scholarly publication.
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KEYWORDS
Etching

Metals

Quantum well infrared photodetectors

Electron beam lithography

Luminescence

Quantum dots

Resistance

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