High-speed 2D VCSEL arrays at 990nm for short reach interconnects

Ashish Tandon; Chao-Kun Lin; Kostadin Djordjev; Scott Corzine; Michael Tan

doi:10.1117/12.597343

14 March 2005 High-speed 2D VCSEL arrays at 990nm for short reach interconnects

Ashish Tandon, Chao-Kun Lin, Kostadin Djordjev, Scott Corzine, Michael Tan

Author Affiliations +

Proceedings Volume 5737, Vertical-Cavity Surface-Emitting Lasers IX; (2005) https://doi.org/10.1117/12.597343
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We have demonstrated high density, 2D (4x12) VCSEL arrays operating at an aggregate data rate of over 480Gb/s in an aerial density of 1400x3750 μm², or 9.14 Tbs/cm². These flip-chip, bottom-emitting 990nm VCSELs have low drive voltage, low electrical parasitics, improved thermal impedance and 2D scalability over their wire-bonded top emitting counterparts. Excellent high speed performance was obtained through the use of 1) compressively strained InGaAs MQW active region 2) low parasitic capacitance oxide-confined VCSEL structures and 3) low series resistance, high index contrast AlGaAs/GaAs mirrors. 10Gb/s operation was obtained with low operating current density of ~6kA/cm² at 70C. Our best results to date have achieved data rates greater than 12.5Gb/s @70C at a current density less than 10kA/cm². The device results show good agreement with theoretically calculated/simulated values. This work was partially supported by DARPA under contract MDA972-03-3-0004.

Citation Download Citation

Ashish Tandon, Chao-Kun Lin, Kostadin Djordjev, Scott Corzine, and Michael Tan "High-speed 2D VCSEL arrays at 990nm for short reach interconnects", Proc. SPIE 5737, Vertical-Cavity Surface-Emitting Lasers IX, (14 March 2005); https://doi.org/10.1117/12.597343

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