Three-dimensional rigorous simulation of mask-induced polarization

Xiuhong Wei; H. P. Urbach; Arthur Wachters; Yuri Aksenov

doi:10.1117/12.597732

12 May 2005 Three-dimensional rigorous simulation of mask-induced polarization

Xiuhong Wei, H. P. Urbach, Arthur Wachters, Yuri Aksenov

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.597732
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The polarization induced by the mask is studied by using a 3D rigorous model, which solves Maxwell equations using the finite element method. The aerial image depends strongly on the change of polarization induced by the materials, thickness of the layer and pitch of the periodic masks.

Citation Download Citation

Xiuhong Wei, H. P. Urbach, Arthur Wachters, and Yuri Aksenov "Three-dimensional rigorous simulation of mask-induced polarization", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.597732

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