The process of low-stress silicon nitride and the application in the fabrication of MEMS device

Hongtao He; Yongqing Xu; Yongjun Yang

doi:10.1117/12.607907

8 December 2004 The process of low-stress silicon nitride and the application in the fabrication of MEMS device

Hongtao He, Yongqing Xu, Yongjun Yang

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607907
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Silicon nitride (Si₃N₄) is an important thin film materials in the construction of micromachined devices that depend upon low stress thin films. This paper presents the methods to obtain desired low stress levels for use in micromachined devices. By analyzing the mechanism of the stress, we developed the processes by LPCVD, to achieve the quality levels in the applications of MEMS. And the results of this process allowed us to form a low stress film for the fabrications of micro cantilevers, and the applications in the micro mirrors in the MOEMS. At last, the results of the MEMS devices is presented.

Citation Download Citation

Hongtao He, Yongqing Xu, and Yongjun Yang "The process of low-stress silicon nitride and the application in the fabrication of MEMS device", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607907

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