PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Electrophotographic spectroscopy, low-frequency capacity and photoconductivity methods were applied to investigate density of the located states in a mobility band of amorphous semiconductors layers As2S3 II As2Se3. Quasicontinuous and strictly localized states of donor and acceptor types are found. The explanation of this is offered on the basis of existence of metastable states, which are created under light, X-Ray and electron excitation. On the basis of the mentioned materials barriers structures are created and elaborated devices for record and reading of optical information in them.
Victor I. Verlan
"Record and reading of optical information in barrier structures on the chalcogenide glass base", Proc. SPIE 5822, Information Technologies 2004, (21 February 2005); https://doi.org/10.1117/12.612216
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Victor I. Verlan, "Record and reading of optical information in barrier structures on the chalcogenide glass base," Proc. SPIE 5822, Information Technologies 2004, (21 February 2005); https://doi.org/10.1117/12.612216