Correction of long-range effects applied to the 65-nm node

Jerome Belledent; James Word; Yorick Trouiller; Christophe Couderc; Corinne Miramond; Olivier Toublan; Jean-Damien Chapon; Stanislas Baron; Amandine Borjon; Franck Foussadier; Christian Gardin; Kevin Lucas; Kyle Patterson; Yves Rody; Frank Sundermann; Jean-Christophe Urbani

doi:10.1117/12.617433

28 June 2005 Correction of long-range effects applied to the 65-nm node

Jerome Belledent, James Word, Yorick Trouiller, Christophe Couderc, Corinne Miramond, Olivier Toublan, Jean-Damien Chapon, Stanislas Baron, Amandine Borjon, Franck Foussadier, Christian Gardin, Kevin Lucas, Kyle Patterson, Yves Rody, Frank Sundermann, Jean-Christophe Urbani

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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617433
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

Specifications for CD control on current technology nodes have become very tight, especially for the gate level. Therefore all systematic errors during the patterning process should be corrected. For a long time, CD variations induced by any change in the local periodicity have been successfully addressed through model or/and rule based corrections. However, if long-range effects (stray light, etch, and mask writing process...) are often monitored, they are seldom taken into account in OPC flows. For the purpose of our study, a test mask has been designed to measure these latter effects separating the contributions of three different process steps (mask writing, exposure and etch). The resulting induced CD errors for several patterns are compared to the allowed error budget. Then, a methodology, usable in standard OPC flows, is proposed to calculate the required correction for any feature in any layout. The accuracy of the method will be demonstrated through experimental results.

Citation Download Citation

Jerome Belledent, James Word, Yorick Trouiller, Christophe Couderc, Corinne Miramond, Olivier Toublan, Jean-Damien Chapon, Stanislas Baron, Amandine Borjon, Franck Foussadier, Christian Gardin, Kevin Lucas, Kyle Patterson, Yves Rody, Frank Sundermann, and Jean-Christophe Urbani "Correction of long-range effects applied to the 65-nm node", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617433

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