Reduction Of Reflection Losses In Solid-State Image Sensors

C. H. L. Weijtens; W. C. Keur

doi:10.1117/12.952081

1 May 1986 Reduction Of Reflection Losses In Solid-State Image Sensors

C. H. L. Weijtens, W. C. Keur

Proceedings Volume 0591, Solid-State Imagers and Their Applications; (1986) https://doi.org/10.1117/12.952081
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

Citation Download Citation

C. H. L. Weijtens and W. C. Keur "Reduction Of Reflection Losses In Solid-State Image Sensors", Proc. SPIE 0591, Solid-State Imagers and Their Applications, (1 May 1986); https://doi.org/10.1117/12.952081

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