Paper
2 September 2005 Recent development of patterned structure light-emitting diodes
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Abstract
The efficiency of a conventional light emitting diode (LED) is limited by coupling of light into guided modes in the structure. Several methods to increase the extraction efficiency of nitride based LEDs are studied from the perspective of the patterned structures in LEDs. The patterned structures are made in the interface between a semiconductor and a sapphire substrate and on the surface of a semiconductor or an indium tin oxide electrode. All of these approaches show an increased light output compared to that of reference samples, which means these kinds of scattering sources are inevitable to make a highly efficient light emitter in nitride-based semiconductor system.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaehee Cho, Jeong Wook Lee, Jin Seo Im, Cheolsoo Sone, Yongjo Park, Dongho Kim, Heonsu Jeon, Euijoon Yoon, Dong-Seok Leem, and Tae-Yeon Seong "Recent development of patterned structure light-emitting diodes", Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 594102 (2 September 2005); https://doi.org/10.1117/12.625922
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Cited by 1 scholarly publication.
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KEYWORDS
Light emitting diodes

Sapphire

Electrodes

Gallium nitride

Copper indium disulfide

Interfaces

Semiconductors

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