Gain and noise properties of InAs/InP quantum dash semiconductor optical amplifiers

A. Bilenca; D. Hadass; R. Alizon; H. Dery; V. Mikhelashvili; G. Eisenstein; A. Somers; W. Kaiser; S. Deubert; J. P. Reithmaier; A. Forchel; M. Calligaro; S. Bansropun; M. Krakowski

doi:10.1117/12.631523

24 October 2005 Gain and noise properties of InAs/InP quantum dash semiconductor optical amplifiers

A. Bilenca, D. Hadass, R. Alizon, H. Dery, V. Mikhelashvili, G. Eisenstein, A. Somers, W. Kaiser, S. Deubert, J. P. Reithmaier, A. Forchel, M. Calligaro, S. Bansropun, M. Krakowski

Author Affiliations +

Proceedings Volume 6014, Active and Passive Optical Components for WDM Communications V; 601404 (2005) https://doi.org/10.1117/12.631523
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

Semiconductor optical amplifiers (SOAs) based on nanostructure gain media such as quantum dots (QD) and quantum dashes (QDASH) have several basic characteristics which offer significant performance improvements over commonly used quantum well (QW) or bulk amplifiers. Among these are broadband optical gain bandwidth (which is two to three times broader than that of QW/bulk gain media), fast gain dynamics, large saturation powers, and low α parameter and population inversion factor. Originally, these properties have been demonstrated for QD/QDASH SOAs operating at 1000 nm and 1300 nm. However, it is imperative that QD/QDASH SOAs operating at 1550 nm be materialized in order for them to have the expected impact on fiber-optic communication. Operation at 1550 nm has been achieved using InAs / InP QD and QDASH laser structures. In this paper the unique gain and noise properties of InAs / InP QDASH SOAs operating at 1550 nm will be presented. Specifically, cross-gain-modulation, four-wave-mixing and chirp measurements which explore the complex spectral cross relaxation dynamics of these SOAs will be described and highlighted in the context of simultaneous, distortionless, high bit-rate multiwavelength data amplification, as well as wideband / high-speed optical signal processing applications. Also, an experimental study of the gain and noise in saturated QDASH SOAs will be described together with a theoretical analysis comprising both coherent and incoherent gain phenomena. The impact of the partially inhomogeneously broadened gain spectrum, fast population pulsation dynamics, α parameter and wetting layer density of states on the noise characteristics will be discussed.

Citation Download Citation

A. Bilenca, D. Hadass, R. Alizon, H. Dery, V. Mikhelashvili, G. Eisenstein, A. Somers, W. Kaiser, S. Deubert, J. P. Reithmaier, A. Forchel, M. Calligaro, S. Bansropun, and M. Krakowski "Gain and noise properties of InAs/InP quantum dash semiconductor optical amplifiers", Proc. SPIE 6014, Active and Passive Optical Components for WDM Communications V, 601404 (24 October 2005); https://doi.org/10.1117/12.631523

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
13 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical amplifiers

Quantum wells

Picosecond phenomena

Indium arsenide

Modulation

Semiconductor optical amplifiers

Waveguides

Show All Keywords

Keywords/Phrases

Search In:

Publication Years