Paper
28 February 2006 GaN quantum dots: nanophotonics and nanophononics
Takayuki Yamanaka, Dimitri Alexson, Michael A. Stroscio, Mitra Dutta, Jay Brown, Pierre Petroff, James Speck
Author Affiliations +
Abstract
Self-assembled GaN quantum dots are characterized using Raman techniques. The electrical and optical properties of these GaN quantum dots are modeled in light of optoelectronic applications. Strain-induced changes in the phononic properties of these nanostructures are modeled and the strain-induced frequency shifts are compared with Raman measurements. Acoustic phonons in colloidal GaN quantum dots are modeled using a quantized elastic continuum model. Shifts observed in the Raman signatures for different excitation wavelengths provide evidence the Raman signatures of GaN quantum dots are observed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Yamanaka, Dimitri Alexson, Michael A. Stroscio, Mitra Dutta, Jay Brown, Pierre Petroff, and James Speck "GaN quantum dots: nanophotonics and nanophononics", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270I (28 February 2006); https://doi.org/10.1117/12.641062
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium nitride

Quantum dots

Phonons

Aluminum nitride

Raman spectroscopy

Acoustics

Spherical lenses

Back to Top