Paper
27 March 2006 Planarization for reverse-tone step and flash imprint lithography
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Abstract
Understanding the dynamics of thin film planarization over topography is a key issue in the reverse-tone step and flash imprint lithography (SFIL-R) process. Complete planarization of a film over large, isolated topography poses an enormous challenge, since the driving force for planarization, the capillary pressure, continuously weakens as the film becomes more planar. For SFIL-R, only a specific degree of planarization (DOP) needs to be achieved before pattern transfer is possible. This paper presents the derivation of an inequality statement describing the required extent of planarization for successful pattern transfer. To observe how this critical DOP value (DOPcrit), and its corresponding leveling time (Tcrit) vary with materials and topographic properties, finite difference simulation was utilized to model planarization of a thin film over isolated topography after the spincoating process. This model was verified experimentally for various film thickness to substrate height ratios using interferometry to monitor silicon oil planarization over isolated trenches and lines. Material and topographic parameters were shown to not have a dramatic impact on DOPcrit; however, the critical leveling time increased considerably at DOPcrit values above 60 percent.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael W. Lin, Huang-Lin Chao, Jianjun Hao, Eui Kyoon Kim, Frank Palmieri, Woon Chun Kim, Michael Dickey, Paul S. Ho, and C. Grant Willson "Planarization for reverse-tone step and flash imprint lithography", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61512G (27 March 2006); https://doi.org/10.1117/12.655626
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Cited by 7 scholarly publications.
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KEYWORDS
Etching

Silicon

Capillaries

Lithography

Thin films

Safety

Silicon films

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