Paper
18 April 2006 Theoretical study of phase stability of InxGa1-xN alloys
Won Ha Moon, Jong Pa Hong, Soo Min Lee, Dong Woohn Kim
Author Affiliations +
Proceedings Volume 6180, Photonics, Devices, and Systems III; 61800U (2006) https://doi.org/10.1117/12.675674
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic
Abstract
Molecular-mechanics based simulations are applied to investigate the structures and phase stability of InGaN alloys. The variation of bond lengths and angles with increasing In composition is found. This causes the considerable structural change and the phase separation of InGaN alloys. The interaction parameter (Ω= -1.3435x + 6.1607 (kcal/mol) ) dependent on In composition is also calculated. The phase diagram for InGaN alloys shows an asymmetry with respect to x0.5. The critical temperature for the phase separation is 1392 K at x = 0.44. These results are in agreement with experimental results.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won Ha Moon, Jong Pa Hong, Soo Min Lee, and Dong Woohn Kim "Theoretical study of phase stability of InxGa1-xN alloys", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61800U (18 April 2006); https://doi.org/10.1117/12.675674
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KEYWORDS
Indium gallium nitride

Gallium

Indium nitride

Gallium nitride

Solids

Binary data

Computer simulations

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