Paper
14 April 2006 Measurement of linewidth enhancement factor of different semiconductor lasers in operating conditions
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Abstract
We apply the self-mixing method for the measurement of the linewidth enhancement factor of several types of semiconductor lasers. The α-factor value above threshold is determined by analysing the small perturbations that occur to the laser when it is subjected to moderate optical feedback, relying on the well-known Lang-Kobayashi equations. The method is applied to Fabry-Perot, VCSEL, External Cavity Laser (ECL), DFB, Quantum Cascade Laser. It is found that for some lasers the α-factor varies with the emitted power, and these variations can be correlated with variations in the laser linewidth.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guido Giuliani, Silvano Donati, and Wolfgang Elsässer "Measurement of linewidth enhancement factor of different semiconductor lasers in operating conditions", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61841D (14 April 2006); https://doi.org/10.1117/12.665178
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Cited by 7 scholarly publications.
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KEYWORDS
Interferometry

Semiconductor lasers

Phase measurement

Stereolithography

Mirrors

Quantum cascade lasers

Vertical cavity surface emitting lasers

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