Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAs

Frederik Sporon-Fiedler; Eicke R. Weber

doi:10.1117/12.961195

26 June 1986 Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAs

Frederik Sporon-Fiedler, Eicke R. Weber

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961195
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The use of scanning deep level transient spectroscopy (SDLTS) in the investigation of deep level trap distributions in LEC GaAs is described. Technique is based on electron beam induced current transients in a Schottky barrier, allowing approx. 1 micron spatial resolution. Results indicating enhanced hole trap concentrations around dislocation cores and walls are presented.

Citation Download Citation

Frederik Sporon-Fiedler and Eicke R. Weber "Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAs", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961195

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