Paper
20 October 2006 Response and sensitivity of TiO2-SnO2 semiconducting sensors for reducing gases
Author Affiliations +
Proceedings Volume 6348, Optoelectronic and Electronic Sensors VI; 63480G (2006) https://doi.org/10.1117/12.721022
Event: Optoelectronic and Electronic Sensors VI, 2006, Zakopane, Poland
Abstract
TiO2-SnO2 mixed oxide semiconductors are proposed as candidates for hydrogen gas sensors. The sensor responses in terms of the electrical conductance and the sensitivity to hydrogen partial pressure and temperature are analyzed in order to optimize the sensor performance.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katarzyna Zakrzewska, Marta Radecka, and Michał Szyper "Response and sensitivity of TiO2-SnO2 semiconducting sensors for reducing gases", Proc. SPIE 6348, Optoelectronic and Electronic Sensors VI, 63480G (20 October 2006); https://doi.org/10.1117/12.721022
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KEYWORDS
Sensors

Gas sensors

Hydrogen

Seaborgium

Semiconductors

Oxygen

Oxides

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