Paper
6 October 2006 Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure
Author Affiliations +
Proceedings Volume 6352, Optoelectronic Materials and Devices; 635218 (2006) https://doi.org/10.1117/12.692714
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
Integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity (OMITMiC) structure, or OMITMiC wavelength-selective photodetector, is a kind of novel integrated multifunction optoelectronic device which was proposed in 1996 and first realized with GaAs-based materials for short wavelength (less than 1μm) operation in 2001. Recently, after great efforts on developing controllable self-retreating dynamic mask (CSRDM) wet etching method for InP-based epitaxial layer and low temperature InP/GaAs wafer bonding technique, such a device operating at long wavelength region (1550nm) had also been successfully demonstrated and the measurement results shown that it features high-speed (12GHz with a mesa area of 40×36 μm2), high quantum efficiency (66%~78.4%), ultra-narrow spectral linewidth (0.6 nm) and wide range tuning (more than 10 nm ) simultaneously. In addition, a long wavelength monolithic OMITMiC photodetector with GaInNAs absorption layer has also been demonstrated. These achievements could have a significant impact on wavelength-division-multiplexed (WDM) optical fiber transmission systems and networks.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaomin Ren, Hui Huang, Yongqing Huang, Xingyan Wang, Qi Wang, Wenjuan Wang, Ang Miao, Yiqun Li, Hailin Cui, Peida Ye, and Joe C. Campbell "Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure", Proc. SPIE 6352, Optoelectronic Materials and Devices, 635218 (6 October 2006); https://doi.org/10.1117/12.692714
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KEYWORDS
Photodetectors

Gallium arsenide

Quantum efficiency

Absorption

Integrated optics

Photography

Optoelectronic devices

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