LWIR HgCdTe focal plane array performance variations with epitaxial structure properties

Galina V. Chekanova; Albina A. Drugova; Viacheslav Kholodnov; Alexander V. Kurbatov; Mikhail S. Nikitin

doi:10.1117/12.689739

5 October 2006 LWIR HgCdTe focal plane array performance variations with epitaxial structure properties

Galina V. Chekanova, Albina A. Drugova, Viacheslav Kholodnov, Alexander V. Kurbatov, Mikhail S. Nikitin

Proceedings Volume 6395, Electro-Optical and Infrared Systems: Technology and Applications III; 63950F (2006) https://doi.org/10.1117/12.689739
Event: Optics/Photonics in Security and Defence, 2006, Stockholm, Sweden

Abstract

Full replacement of scanning type thermal imaging (TI) equipment by starring type TI is on agenda of XXI century. Realization requires development and launching production of affordable large format high performance photovoltaic (PV) infrared (IR) focal plane arrays (FPA) covering spectral range from 1.3 to 14 μm. Advanced Infrared Focal Plane Arrays include Short-Wave (SWIR) 1.3-2.5 μm operating at near room temperature T_op=300 K, Mid-Wave (MWIR) 3- 5.5 μm operating at higher temperatures (HOT) T_op=200-240 K, extended Long-Wave (LWIR) 8-14 μm operating at temperatures T_op=80-100 K and multi-color arrays. Challenge is serious and adequate research and development works have to be done. One of major approach is fabrication of megapixel IRFPA based on Hg_1-xCd_xTe epitaxial multi-layer structures grown by molecular beam epitaxy (MBE). To be successful with approach it is necessary to optimize design of pixel and develop reproducible MBE growth technology issuing epitaxial structures with perfect layers and interfaces. Perhaps novel FPA will be based on photodiodes (PD) with p-n junction opposite to usually used n⁺-p junction. PD with optimal p-n junction could have lower dark current value than same size n⁺-p junction. It is desirable for proper multiplexing of PD arrays to Silicon Read-out Integrated Circuits (ROICs). Objective of the present work was to examine Hg_1-xCd_xTe LWIR PV FPA (λp ranged from 10 to 11 μm at T_op=80-100 K) performance variation with doping level, absorber thickness, interface shunting and operating temperature.

Citation Download Citation

Galina V. Chekanova, Albina A. Drugova, Viacheslav Kholodnov, Alexander V. Kurbatov, and Mikhail S. Nikitin "LWIR HgCdTe focal plane array performance variations with epitaxial structure properties", Proc. SPIE 6395, Electro-Optical and Infrared Systems: Technology and Applications III, 63950F (5 October 2006); https://doi.org/10.1117/12.689739

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KEYWORDS

Cadmium

Tellurium

Mercury

Long wavelength infrared

Staring arrays

Photovoltaics

Doping

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