Lanthanide impurity level location in GaN, AlN, and ZnO

P. Dorenbos; E. van der Kolk

doi:10.1117/12.698977

8 February 2007 Lanthanide impurity level location in GaN, AlN, and ZnO

P. Dorenbos, E. van der Kolk

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 647313 (2007) https://doi.org/10.1117/12.698977
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO₄ and CaF₂ is applied to locate lanthanide levels in the wideband semiconductors GaN, AlN, their solid solutions Al_xGa_1-xN, and ZnO. The proposed schemes provide a description of relevant optical and luminescence properties of these lanthanide doped semiconductors. Especially, the relation between thermal quenching of Tb³⁺ emission and the location of the energy levels is explained.

Citation Download Citation

P. Dorenbos and E. van der Kolk "Lanthanide impurity level location in GaN, AlN, and ZnO", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647313 (8 February 2007); https://doi.org/10.1117/12.698977

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available