Paper
3 May 2007 Resist and BARC outgassing measured by TD-GCMS: investigation during the exposure or the bake steps of the lithographic process
Raluca Tiron, Claire Sourd, Hervé Fontaine, Sylviane Cetre, Bénédicte Mortini
Author Affiliations +
Proceedings Volume 6533, 23rd European Mask and Lithography Conference; 65331E (2007) https://doi.org/10.1117/12.736532
Event: European Mask and Lithography Conference2007, 2007, Grenoble, France
Abstract
In this paper we develop a methodology in order to monitor the organic outgassing level of BARC and resist materials, during the exposure or bake steps of the lithographic process. We present two different approaches, both based on thermal desorption-gas chromatography/mass spectrometry (TD-GC/MS) techniques. First we used an indirect method to monitor the byproducts outgassed during the exposure step. Secondly we check with an in-situ measurement the outgassing behaviour as a function of bake conditions. These two approaches are illustrated using different resist and BARC formulations. Finally, TD-GC-MS technique is integrated in a largest outgassing evaluation protocol, and results obtained by this technique are correlated with other characterization methods such as TGA, FTIR and defectivity monitoring.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raluca Tiron, Claire Sourd, Hervé Fontaine, Sylviane Cetre, and Bénédicte Mortini "Resist and BARC outgassing measured by TD-GCMS: investigation during the exposure or the bake steps of the lithographic process", Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 65331E (3 May 2007); https://doi.org/10.1117/12.736532
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KEYWORDS
Lithography

FT-IR spectroscopy

Polymers

Photoresist processing

Semiconducting wafers

Spectroscopy

Chemical analysis

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