Low Temperature Epitaxial Growth of II-VI Semiconductors

A. M Glass; R D Feldman; D W Kisker; P M Bridenbaugh; P M Mankiewich

doi:10.1117/12.938551

22 November 1986 Low Temperature Epitaxial Growth of II-VI Semiconductors

A. M Glass, R D Feldman, D W Kisker, P M Bridenbaugh, P M Mankiewich

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938551
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

II-VI semiconductor materials are receiving increasing attention for optical applications in the near infrared from 1 to 3 μm. This interest is driven by the wide range of optical and electronic characteristics offered by II-VI compositions for band structure design as well as the attractive band structure characteristics of certain alloys for avalanche detection. New approaches to the growth of high quality II-VI epitaxial layers and super-lattices are discussed. These include the low temperature growth of material by MBE and MOCVD using both pyrolysis and photolysis. In parallel with improved epitaxial techniques, improved substrates are also being developed. Ternary compounds such as Cd1-xMnxTe are found to be of higher crystalline quality than CdTe grown by the same technique. These crystals can be grown with uniform composition of controlled lattice parameter. Epitaxial layers can now be grown either on lattice matched substrates of improved quality or alternatively on lattice mismatched GaAs substrates. In the latter case, a detailed under-standing of the growth of interface phases for high quality epitaxy will be described.

Citation Download Citation

A. M Glass, R D Feldman, D W Kisker, P M Bridenbaugh, and P M Mankiewich "Low Temperature Epitaxial Growth of II-VI Semiconductors", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938551

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