Ratio measurement of reactive ion beam etching rate using optical interferometry

Da-wei Zhang; Yuan-shen Huang; Zheng-ji Ni; Song-lin Zhuang

doi:10.1117/12.782719

21 November 2007 Ratio measurement of reactive ion beam etching rate using optical interferometry

Da-wei Zhang, Yuan-shen Huang, Zheng-ji Ni, Song-lin Zhuang

Proceedings Volume 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment; 67230C (2007) https://doi.org/10.1117/12.782719
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China

Abstract

The ratio measurement of reactive ion beam etching rate using optical interferometry was investigated. The principle is that the depth of groove could be showed by the bend of interference fringe. Using interferometric measurement, the depths of groove before and after etching were determined and marked as d₁, d₂. One new groove whose bottom was on the substrate was made. There are three photos before etching and after etching new grooves were got. It is found that the ratio is 10:3 under the conditions of experiment. Compared with traditional measurement, this kind of way has some advantages such as simplicity, higher measurement precision and so on.

Citation Download Citation

Da-wei Zhang, Yuan-shen Huang, Zheng-ji Ni, and Song-lin Zhuang "Ratio measurement of reactive ion beam etching rate using optical interferometry", Proc. SPIE 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 67230C (21 November 2007); https://doi.org/10.1117/12.782719

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