Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase-shift mask manufacturing

Thomas Faure; Emily E. Gallagher; Louis Kindt; Steven Nash; Ken Racette; Richard Wistrom; Toru Komizo; Yasutaka Kikuchi; Satoru Nemoto; Yushin Sasaki; Atsushi Kominato; Toshiyuki Suzuki

doi:10.1117/12.748664

30 October 2007 Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase shift mask manufacturing

Thomas Faure, Emily E. Gallagher, Louis Kindt, Steven Nash, Ken Racette, Richard Wistrom, Toru Komizo, Yasutaka Kikuchi, Satoru Nemoto, Yushin Sasaki, Atsushi Kominato, Toshiyuki Suzuki

Author Affiliations +

Proceedings Volume 6730, Photomask Technology 2007; 67300C (2007) https://doi.org/10.1117/12.748664
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

As optical lithography is extended for use in manufacturing 45 nm devices, it becomes increasingly important to maximize the lithography process window and enable the largest depth of focus possible at the wafer stepper. Consequently it is very important that the reticles used in the wafer stepper be as flat as possible. The ITRS roadmap requirement for mask flatness for 45 nm node is 250 nm. To achieve this very tight reticle flatness requirement, the stress of each film present on the mask substrate must be minimized. Another key reticle specification influenced by film stress on the mask blank is image placement. In this paper, we will describe the development and detailed characterization of a new low stress Molybdenum Silicide (MoSi) film for use in manufacturing 45 nm node critical level attenuated phase shift masks to be used in 193 nm immersion lithography. Data assessing and comparing the cleaning durability, mask flatness, image placement, Critical Dimension (CD) performance, dry etch properties, phase performance, and defect performance of the new low stress MoSi film versus the previous industry standard A61A higher stress MoSi attenuator film will be described. The results of our studies indicate that the new low stress MoSi film is suitable for 45 nm mask manufacturing and can be introduced with minimal changes to the mask manufacturing process.

Citation Download Citation

Thomas Faure, Emily E. Gallagher, Louis Kindt, Steven Nash, Ken Racette, Richard Wistrom, Toru Komizo, Yasutaka Kikuchi, Satoru Nemoto, Yushin Sasaki, Atsushi Kominato, and Toshiyuki Suzuki "Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase shift mask manufacturing", Proc. SPIE 6730, Photomask Technology 2007, 67300C (30 October 2007); https://doi.org/10.1117/12.748664

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Etching

Distortion

Manufacturing

Line edge roughness

Photoresist processing

Dry etching

Show All Keywords

Keywords/Phrases

Search In:

Publication Years