Fabrication of wall array by electrochemical etching of n-type silicon

Zhigang Zhao; Caili Bai D.V.M.; Jinchuan Guo; Hanben Niu

doi:10.1117/12.755878

4 January 2008 Fabrication of wall array by electrochemical etching of n-type silicon

Zhigang Zhao, Caili Bai D.V.M., Jinchuan Guo, Hanben Niu

Proceedings Volume 6836, MEMS/MOEMS Technologies and Applications III; 68360W (2008) https://doi.org/10.1117/12.755878
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Electrochemical etching of patterned n-type silicon in hydrofluoric acid (HF) solution has been employed as a useful micromachining technique. In this paper, 4 um pitch regular wall array structures with high aspect ratio (larger than 20) were fabricated in n-typed silicon with back side illuminating. Differing from common hole array's fabrication, undesired formation of separated pores along the trench bottom becomes a serious problem in the wall array's fabrication. By adjusting the etching current density, we have successfully suppressed this phenomenon. A theoretical analysis of the formation mechanism of wall array will also be discussed in this paper.

Citation Download Citation

Zhigang Zhao, Caili Bai D.V.M., Jinchuan Guo, and Hanben Niu "Fabrication of wall array by electrochemical etching of n-type silicon", Proc. SPIE 6836, MEMS/MOEMS Technologies and Applications III, 68360W (4 January 2008); https://doi.org/10.1117/12.755878

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