Optimized design on high-power GaN-based micro-LEDs

Jingmei Fan; Liangchen Wang; Jinxia Guo; Xiaoyan Yi; Zhiqiang Liu; Guohong Wang; Jinmin Li

doi:10.1117/12.759302

4 January 2008 Optimized design on high-power GaN-based micro-LEDs

Jingmei Fan, Liangchen Wang, Jinxia Guo, Xiaoyan Yi, Zhiqiang Liu, Guohong Wang, Jinmin Li

Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 684108 (2008) https://doi.org/10.1117/12.759302
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The I-V characteristics of micro-LEDs are almost identical to BALED.

Citation Download Citation

Jingmei Fan, Liangchen Wang, Jinxia Guo, Xiaoyan Yi, Zhiqiang Liu, Guohong Wang, and Jinmin Li "Optimized design on high-power GaN-based micro-LEDs", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 684108 (4 January 2008); https://doi.org/10.1117/12.759302

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