Paper
29 February 2008 Highly unidirectional Y-junction S-section ring lasers
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Abstract
Semiconductor ring lasers show great promise for rotation sensing through the Sagnac effect of frequency shifting. Ensuring a controlled unidirectional operation of ring lasers can greatly benefit this application. An S-section racetrack design for semiconductor ring lasers was previously developed with the goal of favoring the waves traveling in a preselected direction and suppressing the counterpropagating waves. However, that design turned out to be not as effective as expected, with bistable behavior and directional switching over a wide range of pumping currents. We report on design, fabrication and characterization of Y-junction S-section InAs/InGaAs/GaAs/AlGaAs quantum dot ring lasers with improved unidirectionality. The new design suppresses the unwanted counterpropagating waves more effectively than it was possible in the previous S-section-racetrack design.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nathan J. Withers, Omar K. Qassim, Gennady A. Smolyakov, and Marek Osiński "Highly unidirectional Y-junction S-section ring lasers", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688916 (29 February 2008); https://doi.org/10.1117/12.784186
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconductor lasers

Waveguides

Semiconductors

Continuous wave operation

Photodetectors

Photonic integrated circuits

Laser development

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