Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth

D. Plumwongrot; M. Kurokawa; T. Okumura; Y. Nishimoto; T. Maruyama; N. Nishiyama; S. Arai

doi:10.1117/12.764538

29 January 2008 Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth

D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, S. Arai

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69090C (2008) https://doi.org/10.1117/12.764538
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

In order to realize low damage fine structuring processes for the low-dimensional quantum structures, we investigated a process for reducing the degradations of optical properties, which was induced during a reactive-ion-etching (RIE) process with CH₄/H₂ gas mixture in the quantum-well (QW) structures. Quantitative studies of optical degradation were carried out by photoluminescence (PL) and electroluminescence (EL) measurements. We introduced a thicker upper optical confinement layer (OCL) to protect the QWs from the RIE-plasma. In practical, for the PL measurement, twotypes of strain-compensated single-quantum-well (SC-SQW) structures were prepared for 40-nm-thick- and 80-nmthick- upper OCL wafers and covered by 20-nm-thick SiO₂. After the samples were exposed to CH₄/H₂-RIE for 5- minutes, a relatively stronger suppression of integral PL intensity as well as a spectral broadening was observed in the sample with 40-nm-thick OCL, while those did not change in the sample with 80-nm-thick OCL. For the EL measurements, using two types of SC-DQW structures, samples were exposed to CH₄/H₂-RIE plasma for 5-minute and then re-grown for other layers to form high-mesa stripe laser structures (W_s=1.5μm). As a result, the spontaneous emission efficiency of the lasers with 80-nm-thick OCL was almost 2 times higher than that of the lasers with 40-nmthick OCL. In addition, a lower threshold current as well as a higher differential quantum efficiency was obtained for the lasers with 80-nm-thick OCL , while that in lasers with 40-nm-thick OCL indicated poor efficiency and a slightly higher threshold.

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D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai "Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090C (29 January 2008); https://doi.org/10.1117/12.764538

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KEYWORDS

Semiconducting wafers

Quantum wells

Reactive ion etching

Plasma

Silica

Photomasks

Wafer-level optics

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