Paper
20 March 2008 EUV source development at Energetiq
Author Affiliations +
Abstract
As industry advances towards the insertion of EUVL technology, researchers and manufacturers armed with alpha EUV light sources invent an expanding array of potential applications utilizing these sources. This in turn drives development of the light sources to fulfill the large field of specific needs in resist exposure, mirror testing, wafer inspection, etc., which call for a greater variety of source parameters, including output power, source size, and stability. The EQ-10 is a commercially available, medium-power (10 W/2π, 13.5nm ±1%, Xenon) electrodeless Z-pinch light source. Significant field experience and customer feedback has been accumulated from sources already in operation in multiple locations. In response, a development program is under way to re-engineer and optimize the EQ-10 for a variety of applications. Data will be presented on the effect of varying source geometry, frequency, and input power on pinch performance. We have observed a sustained integrated output power of over 15 Watts. The plasma size can be varied to suit customer applications. A related program on beamline design and optimization is also underway, focused on debris mitigation while also maintaining the efficiency of EUV power delivery. Initial results from this program will be summarized.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul A. Blackborow, Matthew J. Partlow, Stephen F. Horne, Matthew M. Besen, Donald K. Smith, and Deborah S. Gustafson "EUV source development at Energetiq", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692121 (20 March 2008); https://doi.org/10.1117/12.772890
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Cited by 7 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Plasma

Zirconium

Xenon

Light sources

Diodes

Mirrors

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