CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 7028 > Article
Open Access Paper
19 May 2008 The lithography technology for the 32 nm HP and beyond
Mircea Dusa, Bill Arnold, Jo Finders, Hans Meiling, Koen van Ingen Schenau, Alek C. Chen
Author Affiliations +
Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702810 (2008) https://doi.org/10.1117/12.796016
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
When using the most advanced water-based immersion scanner at the 32nm node half-pitch, the image resolution will be below the k1 limit of 0.25. In this paper, we will explore the capability of using the double pattern technique (DPT) to extend the resolution capability of the water-based immersion lithography and examine the readiness of EUV to carry the lithography resolution capability beyond the 32 nm HP. The DPT, whether done in two litho and etch steps (LELE) or using the side wall spacer and sacrificial layer technique (SPT), will require significant improvement in CDU and overlay process control performance. We will report the experimental results in exploring the CDU and overlay performance of the LELE and the SPT options. We will also demonstrate the need to perform full field and full wafer process corrections to compensate for dual CDU populations and overlay entangled CDU variations. Furthermore, we will make an assessment of EUV readiness to further extend the lithography resolution capability beyond the 32 nm half-pitch.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Mircea Dusa, Bill Arnold, Jo Finders, Hans Meiling, Koen van Ingen Schenau, and Alek C. Chen "The lithography technology for the 32 nm HP and beyond", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702810 (19 May 2008); https://doi.org/10.1117/12.796016
PROCEEDINGS
 11 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Lens.org Logo
CITATIONS
Cited by 11 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching
Critical dimension metrology
Lithography
Extreme ultraviolet
Double patterning technology
Reticles
Optical lithography
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top