Inductively coupled plasma etching of In1-x-yAlxGayAs in BCl3/Cl2/Ar

Jinhua Ning; Kefeng Zhang; Hengjing Tang; Yang Wang; Xue Li; Hai-mei Gong

doi:10.1117/12.803196

18 November 2008 Inductively coupled plasma etching of In_1-x-yAl_xGa_yAs in BCl₃/Cl₂/Ar

Jinhua Ning, Kefeng Zhang, Hengjing Tang, Yang Wang, Xue Li, Hai-mei Gong

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353I (2008) https://doi.org/10.1117/12.803196
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

In this paper, dry etching of In_0.8Al_0.2As/In_0.8Ga_0.2As/In_1-xAl_xAs (In_1-x-yAl_xGa_yAs) epitaxy material was studied in BCl₃/Cl₂/Ar inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCl₃/Cl₂/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in Cl₂ dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCl₃ increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InCl_x etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.

Citation Download Citation

Jinhua Ning, Kefeng Zhang, Hengjing Tang, Yang Wang, Xue Li, and Hai-mei Gong "Inductively coupled plasma etching of In_1-x-yAl_xGa_yAs in BCl₃/Cl₂/Ar", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353I (18 November 2008); https://doi.org/10.1117/12.803196

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KEYWORDS

Etching

Chlorine

Ions

Plasma

Plasma etching

Indium gallium arsenide

Anisotropic etching

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