Paper
18 February 2009 Temperature dependence of blue InGaN lasers
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Abstract
True blue lasers with wavelengths of ~450 nm are of great interest for full color laser projection. These kind of applications usually require high output power and, in particular, an excellent wall plug efficiency within a wide temperature range. In this paper we therefore present experimental and theoretical investigations of the temperature behavior of 60mW InGaN lasers in a range of -10 °C to 100 °C. The laser parameters threshold current density, slope efficiency and operating voltage describe the wall plug efficiency of the device. The slope efficiency does not show any significant temperature dependence which is due to an almost temperature independent injection efficiency in the temperature range that is of interest for most commercial applications. In contrast, the laser threshold current density increases with temperature and we determine a characteristic temperature T0 of about 141K for our devices emitting at 445nm. This increasing threshold current density can be explained by lower gain of the quantum wells at higher temperature. Furthermore, Auger recombination influences the threshold as verified by simulations. The second electro-optical parameter is the electrical voltage, which is dominated by electrical barriers. The voltage decreases with increasing temperature and compensates the increasing threshold current resulting in a nearly constant high wall plug efficiency of 13% between -10°C and 100°C.
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Stefanie Brüninghoff, Sönke Tautz, Matthias Sabathil, Désirée Queren, Stephan Lutgen, and Uwe Strauß "Temperature dependence of blue InGaN lasers", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161C (18 February 2009); https://doi.org/10.1117/12.807979
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Cited by 6 scholarly publications.
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KEYWORDS
Temperature metrology

Semiconductor lasers

Laser damage threshold

Indium gallium nitride

Quantum wells

Resistance

Continuous wave operation

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