Growth and characterization of isotopic (nat)Ga(15)N by molecular-beam epitaxy

Yong-zhao Yao; Takeshi Ohgaki; Kenji Matsumoto; Isao Sakaguchi; Yoshiki Wada; Hajime Haneda; Takashi Sekiguchi; Naoki Ohashi

doi:10.1117/12.808461

19 February 2009 Growth and characterization of isotopic ^natGa¹⁵N by molecular-beam epitaxy

Yong-zhao Yao, Takeshi Ohgaki, Kenji Matsumoto, Isao Sakaguchi, Yoshiki Wada, Hajime Haneda, Takashi Sekiguchi, Naoki Ohashi

Author Affiliations +

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72162D (2009) https://doi.org/10.1117/12.808461
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Isotopically enriched gallium nitride films, Ga¹⁴N and Ga¹⁵N, have been fabricated by molecular-beam epitaxy to study the effect of nitrogen atomic mass on structures and properties of GaN. Due to the isotopic substitution, the phonon frequency shift has been clearly observed by using Raman spectroscopy. The lattice constants of Ga¹⁵N differed from Ga¹⁴N, and, actually, the unit cell volume of Ga¹⁵N was approximately 0.07% less than that of Ga¹⁴N. Temperature-dependent photoluminescence measurements revealed that recombination mechanism in Ga¹⁴N and Ga¹⁵N was the same to each other in the temperature range of 4-50 K, and the band gap energy difference between them was found to be E_g15-E_g14=6.0±0.1 meV. This E_g difference is discussed in terms of volume shrinkage and change in phonon-electron interaction due to isotopic substitution.

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Yong-zhao Yao, Takeshi Ohgaki, Kenji Matsumoto, Isao Sakaguchi, Yoshiki Wada, Hajime Haneda, Takashi Sekiguchi, and Naoki Ohashi "Growth and characterization of isotopic ^natGa¹⁵N by molecular-beam epitaxy", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162D (19 February 2009); https://doi.org/10.1117/12.808461

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