InGaAs communication photodiodes: from low to high power level designs

M. Achouche

doi:10.1117/12.810232

26 January 2009 InGaAs communication photodiodes: from low to high power level designs

M. Achouche

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72221D (2009) https://doi.org/10.1117/12.810232
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

While InGaAs absorption material has been used for various applications up to 1.6μm wavelength, specific designs for low level detection have become of main interest using high responsivity and low dark current detectors. By adding an avalanche multiplication layer to form an avalanche photodiode (APD) using the Separated Absorption and Multiplication (SAM) structure, one can take advantage of the very low noise properties of multiplication process in large bandgap Al(Ga)(In)As material to improve receiver sensitivity by >10dB. Under high power level injection, specific PIN structures have been developed to improve space charge effects as needed for power applications such as microwave analog photonic links. Specific designs to achieve simultaneously broad bandwidth, high responsivity, very high power saturation and high linearity will be discussed.

Citation Download Citation

M. Achouche "InGaAs communication photodiodes: from low to high power level designs", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72221D (26 January 2009); https://doi.org/10.1117/12.810232

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